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CSD17578Q3A - Texas Instruments

Description: CSD17578Q3A 30 V N-Channel NexFET™ Power MOSFET

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CSD17578Q3A - Texas Instruments PCB footprint - Other - Other - Q3A
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CSD17578Q3A - Texas Instruments  - 3D model - Other - Q3A
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CSD17578Q3A Details

  • Manufacturer Part Number:

    CSD17578Q3A

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    54 A

  • Drain-source On Resistance-Max:

    0.0094 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    73 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    142 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17578Q3A Frequently Asked Questions (FAQs)

  • The maximum SOA for the CSD17578Q3A is not explicitly stated in the datasheet. However, TI provides an SOA curve in the datasheet, which can be used to determine the maximum safe operating conditions. It's recommended to consult with TI's application notes and technical support for specific guidance.
  • To ensure proper thermal management, follow TI's recommended thermal design guidelines, including using a heat sink with a thermal resistance of ≤ 1°C/W, applying a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K, and maintaining a maximum junction temperature (TJ) of 150°C.
  • The recommended gate drive voltage for the CSD17578Q3A is between 4.5 V and 10 V, with a typical value of 5 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To minimize ringing and oscillations, use a gate resistor (RG) with a value between 10 Ω and 100 Ω, and a gate-source capacitor (CGS) with a value between 100 pF and 1 nF. Additionally, ensure proper PCB layout and decoupling, and consider using a snubber circuit or a gate driver with built-in oscillation suppression.
  • Yes, the CSD17578Q3A is suitable for high-frequency switching applications up to 1 MHz. However, the device's performance and reliability may degrade at higher frequencies. Consult TI's application notes and technical support for specific guidance on high-frequency design considerations.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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