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CSD17581Q5A - Texas Instruments

Description: MOSFETs 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm 8-VSONP -55 to 150

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CSD17581Q5A - Texas Instruments - PCB symbol
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CSD17581Q5A - Texas Instruments PCB footprint - Other - Other - DQJ0008A
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CSD17581Q5A - Texas Instruments - 3D model - Other - DQJ0008A
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CSD17581Q5A Details

  • Manufacturer Part Number:

    CSD17581Q5A

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2016-09-15

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    76 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    123 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    195 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    256 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17581Q5A Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD17581Q5A involves keeping the input and output traces separate, using a solid ground plane, and minimizing the length of the input traces to reduce noise and parasitic inductance.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and the VBIAS pin to a voltage divider or a voltage regulator output. The recommended bias voltage is typically between 2.5V to 5.5V.
  • The maximum power dissipation of the CSD17581Q5A is 1.4W. It's essential to ensure the device is properly heat-sinked and the ambient temperature is within the recommended operating range to prevent overheating.
  • Yes, the CSD17581Q5A is suitable for high-frequency applications up to 100 MHz. However, it's essential to consider the device's bandwidth, slew rate, and settling time to ensure it meets the requirements of your specific application.
  • To protect the CSD17581Q5A from ESD, use anti-static wrist straps, mats, or bags during handling and storage. Ensure the device is properly grounded during assembly and testing, and consider using ESD protection devices such as TVS diodes or ESD arrays.

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CSD17581Q5A Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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CSD17581Q5A Alternates

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Part Image CSD17581Q5AT Texas Instruments

Power Field-Effect Transistor, 123A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET