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CSD18511KTT - Texas Instruments

Description: 40V, N ch NexFET MOSFET™, single D2PAK, 2.6mOhm

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PCB Footprints
CSD18511KTT - Texas Instruments PCB footprint - Other - Other - KTT-(R-PSFM-G3)
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CSD18511KTT - Texas Instruments  - 3D model - Other - KTT-(R-PSFM-G3)
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CSD18511KTT Details

  • Manufacturer Part Number:

    CSD18511KTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2017-08-04

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    156 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    306 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18511KTT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD18511KTT is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
  • To ensure the N-channel MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate drive is sufficient to minimize switching losses.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane, and place the device near a thermal pad or heat sink. Ensure good thermal conductivity by using thermal vias and a sufficient copper area for heat dissipation.
  • To handle high peak currents during switching, use a suitable DC-DC converter or power supply with a high current rating, and consider adding a current sense resistor or inductor to limit the inrush current.
  • To prevent ESD damage, handle the device by the body or use an ESD wrist strap, and ensure the PCB has ESD protection components such as TVS diodes or ESD protection arrays.

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CSD18511KTT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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