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CSD18563Q5A - Texas Instruments

Description: MOSFET N-Ch 60V 15A NexFET VSON-FET8EP Texas Instruments CSD18563Q5A N-channel MOSFET Transistor, 100 A, 60 V, 8-Pin VSON-FET-EP

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CSD18563Q5A - Texas Instruments PCB footprint - Other - Other - Q5A_2024
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CSD18563Q5A - Texas Instruments  - 3D model - Other - Q5A_2024
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CSD18563Q5A Details

  • Manufacturer Part Number:

    CSD18563Q5A

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    146 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    93 A

  • Drain-source On Resistance-Max:

    0.0108 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.1 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    116 W

  • Pulsed Drain Current-Max (IDM):

    251 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD18563Q5A Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD18563Q5A is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Refer to the datasheet for specific biasing recommendations.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces, and place the device close to the power source. Avoid using vias under the device, and use a solid ground plane to reduce inductance.
  • Use a voltage regulator or a zener diode to limit the voltage, and add a current-limiting resistor or a fuse to prevent overcurrent conditions. Also, consider adding a TVS diode for ESD protection.
  • The recommended gate drive voltage for the CSD18563Q5A is between 4.5V and 15V, with a typical value of 10V.

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CSD18563Q5A Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD18563Q5AT Texas Instruments

Power Field-Effect Transistor, 93A I(D), 60V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET