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CSD19503KCS - Texas Instruments

Description: 80V, 7.6mOhm, N-Channel TO-220 NexFET™ Power MOSFET

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CSD19503KCS - Texas Instruments - PCB symbol
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PCB Footprints
CSD19503KCS - Texas Instruments PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - KCS_2021
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CSD19503KCS - Texas Instruments - 3D model - Transistor Outline, Vertical - KCS_2021
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CSD19503KCS Details

  • Manufacturer Part Number:

    CSD19503KCS

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0109 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11.1 pF

  • JEDEC-95 Code:

    TO-220

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Pulsed Drain Current-Max (IDM):

    247 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19503KCS Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD19503KCS is -40°C to 150°C.
  • To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended range (typically 4.5V to 10V) and ensure the drain-source voltage (VDS) is within the recommended range (typically 10V to 30V).
  • For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a large copper area. Ensure good thermal conductivity by using thermal vias and a heat sink if necessary. Keep the component away from heat sources and ensure good airflow.
  • Use a voltage regulator to regulate the input voltage, and consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current.
  • A recommended gate drive circuit includes a gate driver IC (e.g., UCC37322) with a suitable resistor and capacitor network to ensure proper gate-source voltage and minimize ringing.

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CSD19503KCS Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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