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CSD19505KTT - Texas Instruments

Description: N-Channel 80 V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3

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CSD19505KTT - Texas Instruments PCB footprint - Other - Other - KTT_2022
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CSD19505KTT Details

  • Manufacturer Part Number:

    CSD19505KTT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2016-03-16

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    34 pF

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19505KTT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD19505KTT is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is 4.5V to 5.5V.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the device close to the power source, and use a solid ground plane to reduce inductance.
  • Use a voltage regulator to limit the voltage to the recommended maximum of 5.5V. Add a current-limiting resistor or a fuse to prevent overcurrent conditions.
  • The recommended gate drive voltage for the CSD19505KTT is 4.5V to 5.5V, with a maximum gate-source voltage of ±10V.

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CSD19505KTT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD19505KTTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 80V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET