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CSD19531KCS - Texas Instruments

Description: Texas Instruments CSD19531KCS N-channel MOSFET Transistor, 110 A, 100 V, 3-Pin TO-220

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PCB Footprints
CSD19531KCS - Texas Instruments PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - KCS0003B
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CSD19531KCS - Texas Instruments  - 3D model - Transistor Outline, Vertical - KCS0003B
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CSD19531KCS Details

  • Manufacturer Part Number:

    CSD19531KCS

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JEDEC-95 Code:

    TO-220

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    179 W

  • Pulsed Drain Current-Max (IDM):

    285 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19531KCS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a high-quality decoupling capacitor (e.g., 10uF) close to the device. Verify the output voltage (VOUT) is within the specified range (0.8V to 3.3V).
  • A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for input decoupling. Place the capacitor as close to the VIN pin as possible.
  • Ensure the input voltage (VIN) is applied before the enable signal (EN). The enable signal should be asserted after the input voltage has reached its nominal value.
  • The maximum allowed output current is 3A. However, the device can deliver up to 5A peak current for short durations (e.g., during startup or transient events).

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CSD19531KCS Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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