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CSD19533Q5AT - Texas Instruments

Description: 100V, 7.8mOhm, SON5x6 N-Channel NexFET™ Power MOSFET

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PCB Footprints
CSD19533Q5AT - Texas Instruments PCB footprint - Other - Other - CSD18501Q5A-1
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CSD19533Q5AT - Texas Instruments  - 3D model - Other - CSD18501Q5A-1
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CSD19533Q5AT Details

  • Manufacturer Part Number:

    CSD19533Q5AT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    106 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0111 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12.5 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    231 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19533Q5AT Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD19533Q5AT involves keeping the high-current paths short and wide, using multiple vias to connect the drain pad to the thermal pad, and placing the device close to the power source to minimize inductance.
  • Proper thermal management involves attaching a heat sink to the thermal pad, using thermal interface material to fill gaps, and ensuring good airflow around the device. The maximum junction temperature (TJ) should not exceed 150°C.
  • When selecting a gate driver, consider the driver's output current capability, rise and fall times, and voltage rating. The driver should be able to provide a high current pulse to quickly charge the gate capacitance, and its output voltage should be compatible with the CSD19533Q5AT's gate-source voltage rating.
  • To protect the CSD19533Q5AT, use a voltage regulator or overvoltage protection circuit to limit the voltage, and consider adding overcurrent protection devices such as fuses or current sensors. Additionally, ensure the device is operated within its safe operating area (SOA).
  • The CSD19533Q5AT has a higher current rating and lower on-resistance (RDS(on)) compared to similar devices. It also has a different package type and pinout, so be sure to check the datasheet for specific details.

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CSD19533Q5AT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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