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CSD19535KCS - Texas Instruments

Description: Texas Instruments CSD19535KCS N-channel MOSFET Transistor, 187 A, 100 V, 3-Pin TO-220

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CSD19535KCS - Texas Instruments - PCB symbol
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PCB Footprints
CSD19535KCS - Texas Instruments PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - KCS Package
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CSD19535KCS - Texas Instruments - 3D model - Transistor Outline, Vertical - KCS Package
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CSD19535KCS Details

  • Manufacturer Part Number:

    CSD19535KCS

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    451 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    150 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    38 pF

  • JEDEC-95 Code:

    TO-220

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19535KCS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a high-quality, low-ESR capacitor (e.g., X5R or X7R) for input decoupling. Bias the device with a stable voltage source, and ensure the output voltage is within the recommended range (0.8V to 3.3V).
  • A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for input decoupling. The capacitor should be placed as close to the VIN pin as possible.
  • Use a shielded inductor, keep the layout compact, and minimize loop areas. Ensure the device is placed away from noise sources and sensitive circuits. Use a common-mode choke or ferrite bead on the input lines to reduce EMI.
  • The maximum allowed output current is 3.5A. However, the device can deliver up to 5A peak current for short durations (e.g., during startup or transient events).

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CSD19535KCS Overview

Use the download button to access the CSD19535KCS schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like CSD19, or try a keyword search, such as Power Field-Effect Transistors

About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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