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CSD88537NDT - Texas Instruments

Description: 60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND

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CSD88537NDT - Texas Instruments PCB footprint - Small Outline Packages - Small Outline Packages - D0008A
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CSD88537NDT - Texas Instruments  - 3D model - Small Outline Packages - D0008A
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CSD88537NDT Details

  • Manufacturer Part Number:

    CSD88537NDT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    51 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.2 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    108 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD88537NDT Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD88537NDT is -40°C to 150°C.
  • Proper thermal management can be achieved by using a heat sink, ensuring good airflow, and keeping the device away from heat sources. A thermal interface material (TIM) can also be used to improve heat transfer.
  • A recommended PCB layout for the CSD88537NDT includes using a 4-layer board with a solid ground plane, keeping high-current paths short and wide, and using vias to connect the thermal pad to the ground plane.
  • To handle the high current requirements of the CSD88537NDT, use a sufficient number of vias to connect the thermal pad to the ground plane, and ensure that the PCB traces are wide enough to handle the current.
  • When selecting an inductor for the CSD88537NDT, consider the inductor's saturation current, DC resistance, and core material. Choose an inductor with a high saturation current, low DC resistance, and a core material that can handle high frequencies.

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CSD88537NDT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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