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CUHS10F60,H3F - Toshiba

Description: Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF

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PCB Footprints
CUHS10F60,H3F - Toshiba PCB footprint - Other - Other - CUHS10F60,H3F-1
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3D Models
CUHS10F60,H3F - Toshiba  - 3D model - Other - CUHS10F60,H3F-1
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CUHS10F60,H3F Details

  • Manufacturer Part Number:

    CUHS10F60,H3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.62 V

  • JESD-30 Code:

    R-PDSO-F2

  • Non-rep Pk Forward Current-Max:

    10 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    60 V

  • Reverse Current-Max:

    40 µA

  • Reverse Test Voltage:

    60 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

CUHS10F60,H3F Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the CUHS10F60,H3F is a 5-pin TO-220F package with a heat sink. The datasheet provides a recommended land pattern and thermal considerations for optimal performance.
  • To ensure reliability in high-temperature applications, it is essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, derating the device's power dissipation and voltage ratings can help prevent overheating and premature failure.
  • The CUHS10F60,H3F is a sensitive semiconductor device and requires proper ESD protection and handling precautions to prevent damage. This includes using anti-static wrist straps, mats, and packaging, as well as minimizing handling and exposure to electrostatic discharge.
  • Yes, the CUHS10F60,H3F can be used in a parallel configuration to increase current handling, but it is essential to ensure that the devices are properly matched and that the current sharing is balanced to prevent overheating and uneven stress on the devices.
  • The CUHS10F60,H3F should be stored in a dry, cool place, away from direct sunlight and moisture. During shipping, the devices should be protected from mechanical stress, vibration, and extreme temperatures to prevent damage.

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CUHS10F60,H3F Overview

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