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CUHS15S30,H3F - Toshiba

Description: Small-signal Schottky barrier diode Single 30V, 1.5A, in 2 pin US2H package

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PCB Footprints
CUHS15S30,H3F - Toshiba PCB footprint - Other - Other - US2H_2021
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3D Models
CUHS15S30,H3F - Toshiba  - 3D model - Other - US2H_2021
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CUHS15S30,H3F Details

  • Manufacturer Part Number:

    CUHS15S30,H3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.43 V

  • JESD-30 Code:

    R-PDSO-F2

  • Non-rep Pk Forward Current-Max:

    10 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    1.5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    500 µA

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

CUHS15S30,H3F Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for CUHS15S30,H3F is a rectangle with dimensions 15.5mm x 12.5mm, with a 1.5mm x 1.5mm pad for the thermal tab. The datasheet provides a recommended land pattern, but it's essential to consult with a PCB design expert to ensure optimal layout and thermal performance.
  • To ensure reliable soldering of CUHS15S30,H3F, follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30s max, and 10s max above 240°C. Use a solder with a melting point above 217°C, and ensure the PCB is clean and free of oxidation. Avoid excessive soldering temperature and time to prevent damage to the component.
  • The maximum allowed voltage derating for CUHS15S30,H3F is 80% of the rated voltage. This means that if the rated voltage is 30V, the maximum allowed voltage derating would be 24V. Exceeding this derating may reduce the component's lifespan or cause premature failure.
  • To handle ESD protection for CUHS15S30,H3F, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure the component is stored in an ESD-protected package. During assembly, use ESD-protected tools and equipment, and avoid touching the component's pins or leads. Implement ESD protection circuits in the design to prevent damage from electrostatic discharge.
  • The thermal resistance of CUHS15S30,H3F is typically around 2.5°C/W (junction-to-case) and 10°C/W (junction-to-ambient). However, this value can vary depending on the specific application, PCB design, and cooling conditions. Consult the datasheet and application notes for more information on thermal management.

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CUHS15S30,H3F Overview

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Part Image CUHS15S30 Toshiba Electronic Devices & Storage Corporation

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 30V V(RRM), Silicon