CY14B108N-BA25XI - Infineon

CY14B108N-BA25XI Details

• Manufacturer Part Number:

  CY14B108N-BA25XI

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  3A991.b.2.a

• HTS Code:

  8542.32.00.41

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  8

• Access Time-Max:

  25 ns

• JESD-30 Code:

  R-PBGA-B48

• JESD-609 Code:

  e1

• Length:

  10 mm

• Memory Density:

  8388608 bit

• Memory IC Type:

  NON-VOLATILE SRAM

• Memory Width:

  16

• Moisture Sensitivity Level:

  3

• Number of Functions:

  1

• Number of Terminals:

  48

• Number of Words:

  524288 words

• Number of Words Code:

  512000

• Operating Mode:

  ASYNCHRONOUS

• Operating Temperature-Max:

  85 °C

• Operating Temperature-Min:

  -40 °C

• Organization:

  512KX16

• Package Body Material:

  PLASTIC/EPOXY

• Package Code:

  TFBGA

• Package Equivalence Code:

  BGA48,6X8,30

• Package Shape:

  RECTANGULAR

• Package Style:

  GRID ARRAY, THIN PROFILE, FINE PITCH

• Parallel/Serial:

  PARALLEL

• Peak Reflow Temperature (Cel):

  260

• Qualification Status:

  Not Qualified

• Seated Height-Max:

  1.2 mm

• Standby Current-Max:

  0.01 A

• Supply Current-Max:

  0.075 mA

• Supply Voltage-Max (Vsup):

  3.6 V

• Supply Voltage-Min (Vsup):

  2.7 V

• Supply Voltage-Nom (Vsup):

  3 V

• Surface Mount:

  YES

• Technology:

  CMOS

• Temperature Grade:

  INDUSTRIAL

• Terminal Finish:

  Tin/Silver/Copper (Sn/Ag/Cu)

• Terminal Form:

  BALL

• Terminal Pitch:

  0.75 mm

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  20

• Width:

  6 mm