The CY62167GE30-45BV1XI can operate from -40°C to 85°C (industrial temperature range) and from -40°C to 125°C (extended temperature range) with reduced performance.
The CY62167GE30-45BV1XI requires a power-up sequence where VCC must be applied before VCCQ, and VCCQ must be removed before VCC during power-down. Additionally, the chip select (S) and output enable (OE) pins must be in a logic high state during power-up and power-down.
The CY62167GE30-45BV1XI supports clock frequencies up to 45 MHz.
To ensure data integrity, it is recommended to use a voltage supervisor or a power-on reset (POR) circuit to ensure that the SRAM is not accessed during power-up and power-down cycles. Additionally, the SRAM should be in a standby mode (CE = HIGH) during power-down to minimize power consumption.
Yes, the CY62167GE30-45BV1XI has a separate VCCQ pin for the output buffers, which allows it to interface with systems having different voltage domains. However, ensure that the voltage levels are within the recommended operating conditions.
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CY62167GE30-45BV1XI Overview
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