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CY7C1441KV33-133BZM - Infineon

Description: Military Temperature, 36-Mbit (1M × 36) Flow-Through SRAM

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CY7C1441KV33-133BZM Details

  • Manufacturer Part Number:

    CY7C1441KV33-133BZM

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8

  • Access Time-Max:

    6.5 ns

  • Additional Feature:

    FLOW-THROUGH ARCHITECTURE

  • JESD-30 Code:

    R-PBGA-B165

  • JESD-609 Code:

    e0

  • Length:

    17 mm

  • Memory Density:

    37748736 bit

  • Memory IC Type:

    CACHE SRAM

  • Memory Width:

    36

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    165

  • Number of Words:

    1048576 words

  • Number of Words Code:

    1000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Organization:

    1MX36

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Screening Level:

    MIL-STD-883

  • Seated Height-Max:

    1.4 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    3.135 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Width:

    15 mm

CY7C1441KV33-133BZM Frequently Asked Questions (FAQs)

  • The CY7C1441KV33-133BZM has an industrial temperature range of -40°C to +85°C, making it suitable for use in a wide range of applications.
  • To ensure data integrity, it is recommended to follow the power-up and power-down sequences outlined in the datasheet, and to use a voltage regulator to ensure a stable power supply. Additionally, consider using a reset signal to initialize the device during power-up.
  • The recommended termination scheme for the DDR3 interface is to use a series resistor (Rs) of 22-33 ohms and a parallel terminator (Rt) of 50-60 ohms. This helps to reduce signal reflections and improve signal integrity.
  • To handle clock domain crossing, it is recommended to use a clock domain crossing circuit or a synchronizer to ensure that data is properly synchronized between clock domains. This helps to prevent metastability and ensure data integrity.
  • The CY7C1441KV33-133BZM supports a maximum clock frequency of 133 MHz, making it suitable for high-speed applications.

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CY7C1441KV33-133BZM Overview

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