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CY7C1480BV33-250BZI - Infineon

Description: SRAM - Synchronous, SDR Memory IC 72Mbit Parallel 250 MHz 3 ns 165-FBGA (15x17)

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CY7C1480BV33-250BZI - Infineon PCB footprint - BGA - BGA - 165-ball FBGA (15 × 17 × 1.4 mm)
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CY7C1480BV33-250BZI - Infineon  - 3D model - BGA - 165-ball FBGA (15 × 17 × 1.4 mm)
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CY7C1480BV33-250BZI Details

  • Manufacturer Part Number:

    CY7C1480BV33-250BZI

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Access Time-Max:

    3 ns

  • Additional Feature:

    PIPELINED ARCHITECTURE

  • Clock Frequency-Max (fCLK):

    250 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B165

  • JESD-609 Code:

    e0

  • Length:

    17 mm

  • Memory Density:

    75497472 bit

  • Memory IC Type:

    CACHE SRAM

  • Memory Width:

    36

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    165

  • Number of Words:

    2097152 words

  • Number of Words Code:

    2000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    2MX36

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA165,11X15,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    220

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.4 mm

  • Standby Voltage-Min:

    3.14 V

  • Supply Current-Max:

    0.5 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    3.135 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Width:

    15 mm

CY7C1480BV33-250BZI Frequently Asked Questions (FAQs)

  • The CY7C1480BV33-250BZI has an industrial temperature range of -40°C to +85°C, making it suitable for use in a wide range of applications.
  • To ensure data integrity, it is recommended to follow the power-up and power-down sequences outlined in the datasheet, and to use a voltage regulator to ensure a stable power supply. Additionally, consider using a power-on reset (POR) circuit to reset the device during power-up.
  • For optimal performance and noise reduction, it is recommended to follow the layout and routing guidelines outlined in the datasheet, including using a solid ground plane, separating power and ground planes, and minimizing inductance in the power and ground traces.
  • To handle asynchronous clock domain crossings, it is recommended to use synchronizers, such as FIFOs or gray code counters, to transfer data between clock domains. Additionally, consider using clock domain crossing (CDC) circuits or asynchronous FIFOs to ensure data integrity.
  • The recommended termination schemes for the CY7C1480BV33-250BZI's outputs depend on the specific application and signal integrity requirements. However, in general, it is recommended to use a 50-ohm termination resistor in series with the output pin, and to consider using a termination network or a Faraday cage to reduce electromagnetic interference (EMI).

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Part Image CY7C1480BV33-250BZXI Cypress Semiconductor

Standard SRAM, 2MX36, 3ns, CMOS, PBGA165