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CY7C2665KV18-550BZI - Infineon

Description: SRAM 144Mb (4Mx36) QDR II QDR II + SRAM

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CY7C2665KV18-550BZI - Infineon PCB footprint - BGA - BGA - CY7C2665KV18-550BZI
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CY7C2665KV18-550BZI Details

  • Manufacturer Part Number:

    CY7C2665KV18-550BZI

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Access Time-Max:

    0.45 ns

  • Additional Feature:

    PIPELINED ARCHITECTURE

  • Clock Frequency-Max (fCLK):

    550 MHz

  • I/O Type:

    SEPARATE

  • JESD-30 Code:

    R-PBGA-B165

  • JESD-609 Code:

    e0

  • Length:

    17 mm

  • Memory Density:

    150994944 bit

  • Memory IC Type:

    QDR II SRAM

  • Memory Width:

    36

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    165

  • Number of Words:

    4194304 words

  • Number of Words Code:

    4000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    4MX36

  • Output Characteristics:

    3-STATE

  • Output Enable:

    NO

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA165,11X15,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Parallel/Serial:

    PARALLEL

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.4 mm

  • Standby Current-Max:

    0.5 A

  • Standby Voltage-Min:

    1.7 V

  • Supply Current-Max:

    1.52 mA

  • Supply Voltage-Max (Vsup):

    1.9 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Width:

    15 mm

CY7C2665KV18-550BZI Frequently Asked Questions (FAQs)

  • The CY7C2665KV18-550BZI has an industrial temperature range of -40°C to +85°C, and a commercial temperature range of 0°C to +70°C.
  • The CY7C2665KV18-550BZI has a built-in JTAG interface that can be used for debugging and testing. You can use the Infineon's JTAG interface documentation and the IEEE 1149.1 standard to implement the JTAG interface.
  • The CY7C2665KV18-550BZI supports a maximum clock frequency of 550 MHz.
  • The CY7C2665KV18-550BZI supports both DDR2 and DDR3 memory interfaces. You can configure the device for either interface by setting the appropriate register settings and using the correct memory timing parameters.
  • The power consumption of the CY7C2665KV18-550BZI depends on the operating frequency, voltage, and other factors. According to the datasheet, the typical power consumption is around 2.5W at 550 MHz and 1.8V.

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CY7C2665KV18-550BZI Overview

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