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D45H11G - onsemi

Description: Fast Switching Speeds; Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A; Complementary Pairs Simplifies Designs; Pb-Free Packages are Available

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Symbol
D45H11G - onsemi - PCB symbol
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PCB Footprints
D45H11G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
D45H11G - onsemi - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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D45H11G Details

  • Manufacturer Part Number:

    D45H11G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

D45H11G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to improve heat dissipation.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
  • Monitor the device's junction temperature (TJ), drain-source voltage (VDS), drain current (ID), and gate-source voltage (VGS) to detect potential faults and ensure reliable operation.
  • Use a gate driver with a high current capability (>1A) and a low output impedance (<10 ohms). Ensure the gate drive voltage is within the recommended range (VGS = 10-15V) and the gate resistance is minimized (<10 ohms).
  • Implement ESD protection devices (e.g., TVS diodes) on the drain and gate pins. Ensure the PCB layout includes a solid ground plane and a Faraday cage structure to minimize ESD susceptibility.

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D45H11G Overview

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D45H11G Alternates

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Image Part Number Model
Part Image D45H11G Rochester Electronics LLC

10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN
Part Image D45H11 Rochester Electronics LLC

10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
Part Image D45H11 Central Semiconductor Corp

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image D45H11 onsemi

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image D45H11LEADFREE Central Semiconductor Corp

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
For a full list of alternate parts for D45H11G, check out Findchips.com