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D45H8G - onsemi

Description: Fast Switching Speeds; Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A; Complementary Pairs Simplifies Designs; Pb-Free Packages are Available

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D45H8G - onsemi - PCB symbol
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PCB Footprints
D45H8G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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3D Models
D45H8G - onsemi - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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D45H8G Details

  • Manufacturer Part Number:

    D45H8G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    40 MHz

D45H8G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a 1-inch square copper pour on the bottom layer for heat dissipation.
  • Implement a heat sink with a thermal interface material, ensure good airflow, and consider derating the device's power handling at high temperatures. Monitor the device's junction temperature and adjust the operating conditions accordingly.
  • Handle the device with an anti-static wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, and consider adding external ESD protection devices if necessary. Follow standard ESD handling procedures during assembly and testing.
  • Yes, the D45H8G is suitable for switching power supply applications. However, ensure the device is operated within its safe operating area (SOA) and consider the device's switching characteristics, such as rise and fall times, to prevent overheating and ensure reliable operation.
  • Use a logic analyzer or oscilloscope to monitor the device's input and output signals. Check the device's operating conditions, such as voltage and current, and ensure the PCB layout is correct. Consult the datasheet and application notes for troubleshooting guidelines.

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D45H8G Overview

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