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DB104G - GeneSiC Semiconductor

Description: Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1KV 1A 400P/280R

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DB104G - GeneSiC Semiconductor - PCB symbol
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DB104G - GeneSiC Semiconductor PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - DB104G
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DB104G - GeneSiC Semiconductor - 3D model - Dual-In-Line Packages - DB104G
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DB104G Details

  • Manufacturer Part Number:

    DB104G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6.62

  • Breakdown Voltage-Min:

    400 V

  • Configuration:

    BRIDGE, 4 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    BRIDGE RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JESD-30 Code:

    R-PDIP-T4

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

DB104G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor junction temperature (TJ) and adjust the system design accordingly.
  • Use a high-current, low-impedance gate drive circuit with a dedicated gate resistor (RG) and a bootstrap capacitor (CB). Ensure a fast rise/fall time (<10 ns) and a voltage swing of 10-15 V.
  • Use a shielded enclosure, keep high-frequency traces short, and use a common-mode choke or ferrite bead on the power lines. Ensure a low-inductance layout and decouple the device with a 10 nF capacitor.
  • Use a curve tracer or a high-power semiconductor parameter analyzer to measure the device's electrical characteristics. Ensure proper fixture design, wiring, and safety precautions to avoid device damage.

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