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DB155G Details
Manufacturer Part Number:
DB155G
Rohs Code:
Part Life Cycle Code:
Active
ECCN Code:
EAR99
HTS Code:
8541.10.00.80
Manufacturer:
Navitas Semiconductor
Breakdown Voltage-Min:
600 V
Configuration:
BRIDGE, 4 ELEMENTS
Diode Element Material:
SILICON
Diode Type:
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF):
1.1 V
JESD-30 Code:
R-PDIP-T4
Non-rep Pk Forward Current-Max:
50 A
Number of Elements:
4
Number of Phases:
1
Number of Terminals:
4
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-65 °C
Output Current-Max:
1.5 A
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
IN-LINE
Peak Reflow Temperature (Cel):
250
Rep Pk Reverse Voltage-Max:
600 V
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
10
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DB155G Overview
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Bridge Rectifier Diodes
