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DB157G - GeneSiC Semiconductor

Description: Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1000V1.5A1KP/700R

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DB157G - GeneSiC Semiconductor PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - DB104G
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DB157G - GeneSiC Semiconductor  - 3D model - Dual-In-Line Packages - DB104G
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DB157G Details

  • Manufacturer Part Number:

    DB157G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6.62

  • Breakdown Voltage-Min:

    1000 V

  • Configuration:

    BRIDGE, 4 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    BRIDGE RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JESD-30 Code:

    R-PDIP-T4

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1.5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    250

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

DB157G Frequently Asked Questions (FAQs)

  • GeneSic recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive material for the heat sink, and maintain a maximum junction temperature (Tj) of 150°C. Also, follow the recommended derating curves for current and voltage.
  • The maximum allowed voltage transient on the drain-source pins is 20% above the maximum rated voltage (Vds) for a duration of less than 10 μs. Exceeding this may cause damage to the device.
  • Yes, but it's crucial to ensure that the devices are matched in terms of threshold voltage and on-resistance. Also, a common gate driver and careful layout are necessary to prevent oscillations and uneven current distribution.
  • A gate drive voltage of 10-15 V and a current of 1-2 A is recommended for optimal switching performance. This ensures fast switching times and minimizes power losses.

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