DDB6U134N16RR footprint, schematic symbol and 3D model by Infineon

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DDB6U134N16RR Details

Manufacturer Part Number:
DDB6U134N16RR
Pbfree Code:
No
Rohs Code:
Yes
Part Life Cycle Code:
Active
Part Package Code:
MODULE
Pin Count:
19
Country Of Origin:
Hungary
ECCN Code:
EAR99
Manufacturer:
Infineon Technologies AG
YTEOL:
5
Case Connection:
ISOLATED
Collector Current-Max (IC):
70 A
Collector-Emitter Voltage-Max:
1200 V
Configuration:
SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
JESD-30 Code:
R-XUFM-X19
Number of Elements:
1
Number of Terminals:
19
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON

The maximum operating temperature range for the DDB6U134N16RR is -40°C to 150°C.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
The recommended gate drive voltage for the DDB6U134N16RR is between 10V and 15V, with a maximum voltage of 20V.
To protect the device, use a voltage regulator or a voltage supervisor to ensure the input voltage remains within the recommended operating range. Additionally, consider using overvoltage protection (OVP) and undervoltage protection (UVP) circuits.
The maximum allowable current for the DDB6U134N16RR is 134A, with a maximum pulsed current of 268A.

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