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DF2B26M4SL,L3F(T - Toshiba

Description: 31.5V (Typ) Clamp 500mA (8/20µs) Ipp Tvs Diode Surface Mount SL2

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DF2B26M4SL,L3F(T - Toshiba PCB footprint - Other - Other - 1-1AL1A_2026
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DF2B26M4SL,L3F(T - Toshiba  - 3D model - Other - 1-1AL1A_2026
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DF2B26M4SL,L3F(T Details

  • Manufacturer Part Number:

    DF2B26M4SL,L3F(T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.97

  • Additional Feature:

    LOW CAPACITANCE

  • Breakdown Voltage-Max:

    33 V

  • Breakdown Voltage-Min:

    21 V

  • Breakdown Voltage-Nom:

    27 V

  • Clamping Voltage-Max:

    38 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N2

  • Non-rep Peak Rev Power Dis-Max:

    19 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    24 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    24 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

DF2B26M4SL,L3F(T Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a solid ground plane and thermal vias under the device to improve heat dissipation. A minimum of 2oz copper thickness is recommended for optimal thermal performance.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure proper heat sinking and thermal management to keep the device within its recommended operating temperature range.
  • Toshiba recommends soldering this device using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30 seconds. Hand soldering is not recommended due to the device's small size and high pin count.
  • To prevent ESD damage, handle the device with an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Use ESD-protective packaging and storage materials, and avoid touching the device's pins or exposed internal components.
  • Store the device in a dry, cool place away from direct sunlight and moisture. Avoid exposing the device to temperatures above 30°C (86°F) or humidity above 60%. Use anti-static packaging and handling materials to prevent ESD damage.

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DF2B26M4SL,L3F(T Overview

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