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DF2B5M5CT,L3F - Toshiba

Description: ESD Suppressors / TVS Diodes Bidirectional ESD Diode VRWM:+/-3.3 V, SOD-882 CT:0.3-0.45pF

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Symbol
DF2B5M5CT,L3F - Toshiba - PCB symbol
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PCB Footprints
DF2B5M5CT,L3F - Toshiba PCB footprint - Other - Other - CST2_2023-1
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3D Models
DF2B5M5CT,L3F - Toshiba - 3D model - Other - CST2_2023-1
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DF2B5M5CT,L3F Details

  • Manufacturer Part Number:

    DF2B5M5CT,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Additional Feature:

    LOW CAPACITANCE

  • Clamping Voltage-Max:

    15 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-XBCC-N2

  • Non-rep Peak Rev Power Dis-Max:

    37 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

DF2B5M5CT,L3F Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • To ensure reliable operation, follow the recommended operating temperature range (−40°C to 150°C), and consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The maximum allowable voltage for Vgs is ±20V, but it's recommended to keep it within ±10V to ensure reliable operation and prevent damage.
  • Yes, the DF2B5M5CT,L3F is suitable for high-frequency switching applications up to 1 MHz, but be aware of the increased power losses and consider using a gate driver with a low output impedance.
  • The internal diode can be handled by using a freewheeling diode or a Schottky diode in parallel with the MOSFET, or by using a gate driver with an integrated diode control.

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DF2B5M5CT,L3F Overview

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