DF2B6.8M1ACT - Toshiba

DF2B6.8M1ACT Details

• Manufacturer Part Number:

  DF2B6.8M1ACT

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.50

• Manufacturer:

  Toshiba America Electronic Components

• YTEOL:

  6.46

• Additional Feature:

  LOW CAPACITANCE

• Breakdown Voltage-Max:

  11 V

• Breakdown Voltage-Min:

  6 V

• Breakdown Voltage-Nom:

  8.5 V

• Clamping Voltage-Max:

  20 V

• Configuration:

  SINGLE

• Diode Element Material:

  SILICON

• Diode Type:

  TRANS VOLTAGE SUPPRESSOR DIODE

• JESD-30 Code:

  R-XBCC-N2

• Non-rep Peak Rev Power Dis-Max:

  50 W

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  UNSPECIFIED

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity:

  BIDIRECTIONAL

• Reference Standard:

  IEC-61000-4-2, 4-5

• Rep Pk Reverse Voltage-Max:

  5 V

• Reverse Current-Max:

  0.5 µA

• Reverse Test Voltage:

  5 V

• Surface Mount:

  YES

• Technology:

  AVALANCHE

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED