Please enter a minimum 3 letters or numbers
Technical Content
Part Image

DF2B6M4ASL,L3F - Toshiba

Description: Bi-directional Single ESD Protection Diode Ipp: 2A VRWM(max):5.5V

Download DF2B6M4ASL,L3F Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
DF2B6M4ASL,L3F - Toshiba - PCB symbol
click to zoom
PCB Footprints
DF2B6M4ASL,L3F - Toshiba PCB footprint - Other - Other - SL2_1
click to zoom
3D Models
DF2B6M4ASL,L3F - Toshiba - 3D model - Other - SL2_1
click to zoom

DF2B6M4ASL,L3F Details

  • Manufacturer Part Number:

    DF2B6M4ASL,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Additional Feature:

    LOW CAPACITANCE

  • Breakdown Voltage-Max:

    8 V

  • Breakdown Voltage-Min:

    5.6 V

  • Breakdown Voltage-Nom:

    6.2 V

  • Clamping Voltage-Max:

    15 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N2

  • Non-rep Peak Rev Power Dis-Max:

    30 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    5.5 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    5.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

DF2B6M4ASL,L3F Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Toshiba suggests using a heat sink, ensuring good airflow, and following the recommended derating curves for temperature and voltage to ensure reliable operation in high-temperature environments.
  • The maximum allowable voltage for the MOSFET's gate-source and gate-drain is ±20V, as specified in the datasheet, to prevent damage to the device.
  • Yes, the DF2B6M4ASL,L3F is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Use the datasheet's thermal resistance values (Rth(j-a) and Rth(j-c)) and the device's power consumption to calculate the junction temperature. Ensure the calculated temperature is within the recommended operating range.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

DF2B6M4ASL,L3F Overview

Use the download button to access the DF2B6M4ASL,L3F schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like DF2B6, or try a keyword search, such as Transient Suppressors

Parts related to DF2B6M4ASL,L3F

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑