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DF2S14P2CTC,L3F - Toshiba

Description: ESD Suppressors / TVS Diodes

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DF2S14P2CTC,L3F - Toshiba PCB footprint - Other - Other - DF2S14P2CTC,L3F-2
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DF2S14P2CTC,L3F Details

  • Manufacturer Part Number:

    DF2S14P2CTC,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Breakdown Voltage-Max:

    15.5 V

  • Breakdown Voltage-Min:

    12.9 V

  • Breakdown Voltage-Nom:

    13.5 V

  • Clamping Voltage-Max:

    32 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-XBCC-N2

  • Non-rep Peak Rev Power Dis-Max:

    1600 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    12.6 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    12.6 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

DF2S14P2CTC,L3F Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Toshiba recommends using a heat sink with a thermal interface material, and ensuring good airflow around the device. Additionally, derating the device's power dissipation according to the temperature derating curve is essential.
  • Toshiba recommends limiting the voltage stress to 1.5 times the rated voltage to prevent damage to the device. Exceeding this limit may reduce the device's lifespan or cause immediate failure.
  • While the DF2S14P2CTC,L3F is suitable for high-frequency switching, Toshiba recommends careful consideration of the device's switching losses, parasitic inductance, and capacitance to ensure reliable operation. A thorough simulation and testing are recommended to validate the design.
  • Toshiba recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure fast and reliable switching. The exact values may vary depending on the specific application and PCB layout.

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DF2S14P2CTC,L3F Overview

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