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DF2S30FS,L3M - Toshiba

Description: ESD Suppressors / TVS Diodes ESD protection diode STAND Unidirectiona

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DF2S30FS,L3M - Toshiba PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - sod-923
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DF2S30FS,L3M - Toshiba  - 3D model - Small Outline Diode Flat Lead - sod-923
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DF2S30FS,L3M Details

  • Manufacturer Part Number:

    DF2S30FS,L3M

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOD-923, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • Breakdown Voltage-Max:

    32 V

  • Breakdown Voltage-Min:

    28 V

  • Breakdown Voltage-Nom:

    30 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-F2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    23 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    23 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

DF2S30FS,L3M Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer of the PCB, connected to the drain pin of the MOSFET, to act as a heat sink. Additionally, using thermal vias to connect the top and bottom layers can help to dissipate heat more efficiently.
  • To ensure the MOSFET is fully turned on and off, the gate-source voltage (Vgs) should be driven to the recommended levels (typically 10V for this device). A gate driver IC can be used to provide a high current drive capability and fast switching times. Additionally, the gate resistor value should be optimized to minimize power losses.
  • To prevent damage, it is recommended to handle the device by the body or the pins, avoiding touching the die or the internal components. Anti-static precautions should be taken, such as using an anti-static wrist strap or mat, to prevent electrostatic discharge (ESD) damage.
  • The maximum allowable power dissipation can be determined by calculating the maximum allowable junction temperature (Tj) and the thermal resistance (Rth) of the device. The power dissipation can then be calculated using the equation: Pd = (Tj - Ta) / Rth, where Ta is the ambient temperature.
  • When paralleling multiple devices, it is essential to ensure that the devices are matched in terms of their electrical characteristics, such as threshold voltage and transconductance. The gate drive circuitry should be designed to ensure that all devices are driven simultaneously and evenly. Additionally, the PCB layout should be designed to minimize current imbalance and thermal mismatch between devices.

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DF2S30FS,L3M Overview

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