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DF2S5.6CT,L3F - Toshiba

Description: ESD Suppressors / TVS Diodes ESD protection diode STAND Unidirectional

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PCB Footprints
DF2S5.6CT,L3F - Toshiba PCB footprint - Other - Other - 1-1P1S
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DF2S5.6CT,L3F - Toshiba  - 3D model - Other - 1-1P1S
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DF2S5.6CT,L3F Details

  • Manufacturer Part Number:

    DF2S5.6CT,L3F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    8

  • Breakdown Voltage-Max:

    6 V

  • Breakdown Voltage-Min:

    5.3 V

  • Breakdown Voltage-Nom:

    5.6 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-XBCC-N2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.15 W

  • Reference Standard:

    IEC61000-4-2

  • Reference Voltage-Nom:

    5.6 V

  • Rep Pk Reverse Voltage-Max:

    3.5 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    3.5 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Voltage Tol-Max:

    6.19%

  • Working Test Current:

    5 mA

DF2S5.6CT,L3F Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package is recommended for heat dissipation. A copper pour on the PCB with multiple vias to a solid ground plane is also recommended to reduce thermal resistance.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and consider derating the device's power handling at high temperatures (above 85°C).
  • Use a soldering temperature of 260°C (max) with a dwell time of 10 seconds (max). Avoid using soldering temperatures above 280°C, as it may damage the device.
  • While the DF2S5.6CT,L3F is a high-quality device, it may not meet the specific requirements of high-reliability or aerospace applications. Consult with Toshiba or a qualified reliability engineer to determine suitability.
  • Use proper ESD protection measures, such as wrist straps, ESD mats, and ionizers, to prevent damage from static electricity. Handle the device by the body or pins, avoiding direct contact with the die.

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DF2S5.6CT,L3F Overview

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