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DF2S5M5SL,L3F - Toshiba

Description: 16V (Typ) Clamp 2.5A (8/20µs) Ipp Tvs Diode Surface Mount SL2

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Symbol
DF2S5M5SL,L3F - Toshiba - PCB symbol
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PCB Footprints
DF2S5M5SL,L3F - Toshiba PCB footprint - Other - Other - 1-1AL1A_2024
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3D Models
DF2S5M5SL,L3F - Toshiba - 3D model - Other - 1-1AL1A_2024
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DF2S5M5SL,L3F Details

  • Manufacturer Part Number:

    DF2S5M5SL,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Additional Feature:

    LOW CAPACITANCE

  • Clamping Voltage-Max:

    37.5 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N2

  • Non-rep Peak Rev Power Dis-Max:

    37 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

DF2S5M5SL,L3F Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Implement a heat sink or thermal management system, and ensure the device is operated within the recommended temperature range (−40°C to 150°C).
  • The maximum allowed Vgs is ±20V, but it's recommended to keep it within ±10V for reliable operation.
  • Yes, the DF2S5M5SL,L3F is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • Use the formula: Pd = Id^2 * Rds(on) * (1 - duty cycle), where Id is the drain current, Rds(on) is the on-state resistance, and duty cycle is the percentage of time the MOSFET is conducting.

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DF2S5M5SL,L3F Overview

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