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DF2S6P1CT,L3F - Toshiba

Description: Unidirectional ESD Diode VRWM=5.5V IPP= 10A Vesd=+/-30kV

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PCB Footprints
DF2S6P1CT,L3F - Toshiba PCB footprint - Other - Other - SOD-882
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DF2S6P1CT,L3F Details

  • Manufacturer Part Number:

    DF2S6P1CT,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Breakdown Voltage-Max:

    8 V

  • Breakdown Voltage-Min:

    5.6 V

  • Breakdown Voltage-Nom:

    6.7 V

  • Clamping Voltage-Max:

    16 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-XBCC-N2

  • Non-rep Peak Rev Power Dis-Max:

    160 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    5.5 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    5.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

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This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
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DF2S6P1CT,L3F Overview

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