Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
Use a heat sink, ensure good airflow, and consider derating the device's power handling capability according to the temperature derating curve provided in the datasheet.
The maximum allowable voltage stress is 1.5 times the rated voltage (Vr) for a duration of 100ms, as specified in the datasheet.
Yes, but ensure that the devices are matched in terms of electrical characteristics, and consider the effects of current imbalance and thermal runaway.
Use a TVS diode or a transient voltage suppressor to protect against EOS, and follow proper ESD handling procedures during assembly and storage.
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DF3A3.3FV,L3F Overview
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