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DF3A5.6FU(TE85L,F) - Toshiba

Description: ESD Suppressors ESD Standard Type Protection Diode, 100mW, 1.0μA, 5.6V ~ 6.0V, 40Ω, −55°C to 125°C

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DF3A5.6FU(TE85L,F) - Toshiba PCB footprint - Other - Other - 1-2P1S_2025-2
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DF3A5.6FU(TE85L,F) - Toshiba  - 3D model - Other - 1-2P1S_2025-2
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DF3A5.6FU(TE85L,F) Details

  • Manufacturer Part Number:

    DF3A5.6FU(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • Breakdown Voltage-Max:

    6 V

  • Breakdown Voltage-Min:

    5.3 V

  • Breakdown Voltage-Nom:

    5.6 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS, 2 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Dynamic Impedance-Max:

    40 Ω

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.1 W

  • Reference Standard:

    IEC 61000-4-2

  • Reference Voltage-Nom:

    5.6 V

  • Rep Pk Reverse Voltage-Max:

    2.5 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    2.5 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Voltage Tol-Max:

    5.4%

  • Working Test Current:

    5 mA

DF3A5.6FU(TE85L,F) Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package is recommended for heat dissipation. A copper pour on the PCB with multiple vias can help to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and consider derating the device's power handling at high temperatures (above 85°C).
  • Handle the device in an ESD-protected environment, use anti-static wrist straps and mats, and store the device in anti-static packaging to prevent ESD damage.
  • While the DF3A5.6FU is a high-quality device, it may not meet the specific requirements for high-reliability or aerospace applications. Consult with Toshiba or a qualified reliability engineer to determine suitability.
  • Use a logic analyzer or oscilloscope to monitor signals, check for proper power supply and decoupling, and consult the datasheet and application notes for troubleshooting guidance.

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DF3A5.6FU(TE85L,F) Overview

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