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DF3D36FU,LXHF - Toshiba

Description: ESD Suppressors / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:6.5pF VBR:32V @1mA VESD:+/-20V IPP:2.5A IR:0.1uA SOT-323

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PCB Footprints
DF3D36FU,LXHF - Toshiba PCB footprint - Other - Other - DF3D36FU,LXHF-2
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3D Models
DF3D36FU,LXHF - Toshiba  - 3D model - Other - DF3D36FU,LXHF-2
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DF3D36FU,LXHF Details

  • Manufacturer Part Number:

    DF3D36FU,LXHF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    36 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Breakdown Voltage-Max:

    40 V

  • Breakdown Voltage-Min:

    32 V

  • Breakdown Voltage-Nom:

    36 V

  • Clamping Voltage-Max:

    60 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-G3

  • Non-rep Peak Rev Power Dis-Max:

    150 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

  • Rep Pk Reverse Voltage-Max:

    28 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    28 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

DF3D36FU,LXHF Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • Toshiba recommends following the derating guidelines in the datasheet, using a heat sink if necessary, and ensuring good airflow around the device. Additionally, consider using a thermistor or thermal sensor to monitor the device temperature.
  • Toshiba recommends limiting the voltage stress to 20V maximum during power-up or power-down to prevent damage to the internal ESD protection diodes.
  • Yes, the DF3D36FU,LXHF is suitable for high-frequency switching applications up to 100kHz. However, ensure that the PCB layout is optimized for high-frequency operation, and consider using a snubber circuit to reduce ringing and EMI.
  • Toshiba recommends following standard ESD handling procedures, such as using an ESD wrist strap or mat, and avoiding direct contact with the device pins. Additionally, ensure that the device is stored in an anti-static bag or container.

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DF3D36FU,LXHF Overview

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