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DF5A6.8JE,LM - Toshiba

Description: ESD Suppressors / TVS Diodes ESD 4 Circuit 45pF 0.5uA 6.8V

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PCB Footprints
DF5A6.8JE,LM - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - N581-499
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3D Models
DF5A6.8JE,LM - Toshiba  - 3D model - SO Transistor Flat Lead - N581-499
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DF5A6.8JE,LM Details

  • Manufacturer Part Number:

    DF5A6.8JE,LM

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Toshiba America Electronic Components

  • Breakdown Voltage-Max:

    7.2 V

  • Breakdown Voltage-Min:

    6.4 V

  • Breakdown Voltage-Nom:

    6.8 V

  • Configuration:

    COMMON ANODE, 4 ELEMENTS, 2 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-F5

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    4

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.1 W

  • Reference Standard:

    IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    5 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    5 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

DF5A6.8JE,LM Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the DF5A6.8JE,LM is -40°C to 125°C.
  • To ensure reliability, it's essential to follow the recommended derating guidelines, provide adequate heat sinking, and ensure proper thermal management.
  • The maximum allowable power dissipation for the DF5A6.8JE,LM is 2.5W. Exceeding this limit can lead to device failure.
  • Yes, the DF5A6.8JE,LM is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics and ensure proper layout and design to minimize parasitic inductance and capacitance.
  • To prevent ESD damage, handle the DF5A6.8JE,LM with anti-static wrist straps, mats, or other ESD-protective equipment. Ensure that the assembly process and storage environments are ESD-safe.

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