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DMC3016LDV-13 - Diodes Incorporated

Description: Mosfet Array N and P-Channel Complementary 30V 21A (Tc), 15A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8

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PCB Footprints
DMC3016LDV-13 - Diodes Incorporated PCB footprint - Other - Other - PowerDI3333-8 (Type UXC)_2021
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3D Models
DMC3016LDV-13 - Diodes Incorporated  - 3D model - Other - PowerDI3333-8 (Type UXC)_2021
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DMC3016LDV-13 Details

  • Manufacturer Part Number:

    DMC3016LDV-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    28 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    107 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.8 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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DMC3016LDV-13 Overview

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