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DMN10H220LFDF-7 - Diodes Incorporated

Description: N-Channel 100 V 2.2A (Ta) 1.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

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DMN10H220LFDF-7 - Diodes Incorporated - PCB symbol
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PCB Footprints
DMN10H220LFDF-7 - Diodes Incorporated PCB footprint - Other - Other - U-DFN2020-6 (Type F)_2024-1
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DMN10H220LFDF-7 - Diodes Incorporated - 3D model - Other - U-DFN2020-6 (Type F)_2024-1
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DMN10H220LFDF-7 Details

  • Manufacturer Part Number:

    DMN10H220LFDF-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    U-DFN2020-6, 6 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1.1 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.225 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    8.8 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN10H220LFDF-7 Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for DMN10H220LFDF-7 can be found in the Diodes Incorporated's application note AN154, which provides guidelines for PCB layout and assembly.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • Yes, DMN10H220LFDF-7 is suitable for use in switching power supply applications due to its fast switching speed and low losses. However, it is recommended to carefully evaluate the device's performance under the specific application conditions and to follow the guidelines provided in the datasheet.
  • The recommended gate drive voltage for DMN10H220LFDF-7 is between 10V and 15V, depending on the specific application requirements. It is recommended to consult the datasheet and application notes for more detailed information.
  • To handle the ESD sensitivity of DMN10H220LFDF-7, it is recommended to follow proper ESD handling procedures during assembly and testing, and to use ESD protection devices or circuits in the application design.

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DMN10H220LFDF-7 Overview

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