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DMN10H220LQ-7 - Diodes Incorporated

Description: N-Channel 100 V 1.6A (Ta) 1.3W (Ta) Surface Mount SOT-23-3

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PCB Footprints
DMN10H220LQ-7 - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (f)6
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DMN10H220LQ-7 - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - SOT-23 (f)6
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DMN10H220LQ-7 Details

  • Manufacturer Part Number:

    DMN10H220LQ-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.4 A

  • Drain-source On Resistance-Max:

    0.22 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Reference Standard:

    AEC-Q101; MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN10H220LQ-7 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the DMN10H220LQ-7 can be found in the Diodes Incorporated's package outline drawing, which is usually available on their website or through their customer support. The land pattern should be designed to accommodate the device's lead frame and ensure good thermal and electrical connections.
  • To ensure the reliability of the DMN10H220LQ-7 in high-temperature applications, it is essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal management techniques such as heat sinks or thermal interfaces to reduce the device's junction temperature.
  • The DMN10H220LQ-7 has an internal ESD protection circuit, but it is still recommended to follow proper ESD handling and storage procedures to prevent damage. It is also recommended to use ESD-protected workstations and tools when handling the device.
  • The DMN10H220LQ-7 is a high-speed switch, but its frequency response is limited by its internal capacitance and inductance. For high-frequency switching applications, it is recommended to evaluate the device's performance using simulation tools or prototyping, and to consider using a device with a higher frequency rating if necessary.
  • The optimal gate resistor value for the DMN10H220LQ-7 depends on the specific application and the desired switching characteristics. A general guideline is to start with a value between 10 ohms and 100 ohms, and then adjust based on the device's switching performance and power dissipation.

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