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DMN2011UFX-7 - Diodes Incorporated

Description: MOSFET Dual N-Ch Enh FET 20Vds 12Vgs 2248pF

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DMN2011UFX-7 - Diodes Incorporated PCB footprint - Other - Other - DMN2011UFX-7
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DMN2011UFX-7 - Diodes Incorporated  - 3D model - Other - DMN2011UFX-7
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DMN2011UFX-7 Details

  • Manufacturer Part Number:

    DMN2011UFX-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    V-DFN2050-4, 4 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    17 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    10.4 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    265 pF

  • JESD-30 Code:

    R-PDSO-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN2011UFX-7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the DMN2011UFX-7 is -55°C to 150°C.
  • Yes, the DMN2011UFX-7 is suitable for high-frequency switching applications due to its low capacitance and high switching speed.
  • To minimize parasitic inductance, it is recommended to use a compact PCB layout with short leads and a solid ground plane, and to place the device close to the power source.
  • Yes, the DMN2011UFX-7 can be used in high-voltage applications up to 200V, but it is recommended to derate the voltage according to the temperature and other operating conditions.
  • Yes, the DMN2011UFX-7 is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.

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DMN2011UFX-7 Overview

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