DMN2011UTS-13 - Diodes Incorporated

DMN2011UTS-13 Details

• Manufacturer Part Number:

  DMN2011UTS-13

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  TSSOP-8

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• Factory Lead Time:

  12 Weeks

• Manufacturer:

  Diodes Incorporated

• YTEOL:

  5

• Avalanche Energy Rating (Eas):

  17 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  20 V

• Drain Current-Max (ID):

  9 A

• Drain-source On Resistance-Max:

  0.013 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  265 pF

• JESD-30 Code:

  R-PDSO-G8

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  1.3 W

• Pulsed Drain Current-Max (IDM):

  70 A

• Reference Standard:

  MIL-STD-202

• Surface Mount:

  YES

• Terminal Finish:

  MATTE TIN

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON