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DMN3010LFG-13 - Diodes Incorporated

Description: MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss

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DMN3010LFG-13 - Diodes Incorporated PCB footprint - Other - Other - POWERDI3333-8_1
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DMN3010LFG-13 - Diodes Incorporated  - 3D model - Other - POWERDI3333-8_1
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DMN3010LFG-13 Details

  • Manufacturer Part Number:

    DMN3010LFG-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Terminal Finish:

    Matte Tin (Sn)

DMN3010LFG-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • The DMN3010LFG-13 requires a bias voltage of 1.8V to 5V on the gate pin, and a drain-source voltage of up to 30V. Ensure the bias voltage is within the recommended range and the drain-source voltage is within the absolute maximum rating.
  • The maximum power dissipation for the DMN3010LFG-13 is 1.5W, and it's essential to ensure the device operates within this limit to prevent overheating and damage.
  • Yes, the DMN3010LFG-13 is suitable for high-frequency switching applications up to 100MHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and oscillations.
  • Diodes Incorporated recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the DMN3010LFG-13 from electrostatic discharge. Additionally, follow proper handling and storage procedures to prevent ESD damage.

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