Part Image

DMN3032LFDB-7 - Diodes Incorporated

Description: MOSFET MOSFET BVDSS

Download DMN3032LFDB-7 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
DMN3032LFDB-7 - Diodes Incorporated PCB footprint - Other - Other - U-DFN2020-6(Type B)
click to zoom
3D Models
DMN3032LFDB-7 - Diodes Incorporated  - 3D model - Other - U-DFN2020-6(Type B)
click to zoom

DMN3032LFDB-7 Details

  • Manufacturer Part Number:

    DMN3032LFDB-7

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    U-DFN2020-6

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.2 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    44 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    NICKEL PALLADIUM GOLD

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN3032LFDB-7 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the DMN3032LFDB-7 is a 3x3mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • To ensure proper biasing, follow the recommended operating conditions and biasing circuitry outlined in the datasheet. This includes setting the input voltage (VIN) to 2.5V to 5.5V, and the output voltage (VOUT) to 1.2V to 3.3V.
  • The DMN3032LFDB-7 is capable of delivering up to 3A of output current. However, the actual output current capability may be limited by the input voltage, output voltage, and thermal considerations.
  • To ensure proper thermal management, follow the recommended thermal design guidelines outlined in the datasheet. This includes providing adequate heat sinking, using thermal vias, and keeping the device away from heat sources.
  • The DMN3032LFDB-7 has built-in ESD protection and latch-up immunity, with a human body model (HBM) rating of ±2kV and a charged device model (CDM) rating of ±500V.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

DMN3032LFDB-7 Overview

Use the download button to access the DMN3032LFDB-7 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like DMN30, or try a keyword search, such as Power Field-Effect Transistors

Parts related to DMN3032LFDB-7

Showing 0 results