DMN3055LFDB-7 footprint, schematic symbol and 3D model by Diodes Incorporated

Symbol

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PCB Footprints

DMN3055LFDB-7 - Diodes Incorporated PCB footprint - Other - Other - U-DFN2020-6 (Type B)_2025-9

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3D Models

DMN3055LFDB-7 - Diodes Incorporated - 3D model - Other - U-DFN2020-6 (Type B)_2025-9

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Datasheet Download Datasheet
Stock & Prices Price & Stock for DMN3055LFDB-7
Part Number DMN3055LFDB-7
Manufacturer Diodes Incorporated
Pin Count 8
Part Category Transistor
Package Category Other
Footprint Name Other - U-DFN2020-6 (Type B)_2025-9
Released Date Feb 26, 2025
Last Modified Date Mar 17, 2025 4:05 AM UTC
Pinout / Pin List Click Here (Member Only)

DMN3055LFDB-7 Details

Manufacturer Part Number:
DMN3055LFDB-7
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
U-DFN2020-6
Reach Compliance Code:
Compliant
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
12 Weeks
Manufacturer:
Diodes Incorporated
YTEOL:
5
Avalanche Energy Rating (Eas):
6 mJ
Case Connection:
DRAIN
Configuration:
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
5 A
Drain-source On Resistance-Max:
0.04 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
44 pF
JESD-30 Code:
S-PDSO-N6
JESD-609 Code:
e4
Number of Elements:
2
Number of Terminals:
6
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
1.36 W
Pulsed Drain Current-Max (IDM):
25 A
Reference Standard:
MIL-STD-202
Surface Mount:
YES
Terminal Finish:
NICKEL PALLADIUM GOLD
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

DMN3055LFDB-7 Frequently Asked Questions (FAQs)

The recommended footprint and land pattern for DMN3055LFDB-7 can be found in the Diodes Incorporated's application note AN-111, which provides guidelines for PCB layout and assembly.
To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
The maximum allowable power dissipation for DMN3055LFDB-7 is dependent on the ambient temperature and the thermal resistance of the device. Refer to the thermal characteristics section of the datasheet for more information.
Yes, DMN3055LFDB-7 can be used in switching applications, but it is recommended to follow the switching characteristics and safe operating area (SOA) guidelines provided in the datasheet to ensure reliable operation.
To protect DMN3055LFDB-7 from ESD, it is recommended to follow proper handling and storage procedures, and to use ESD protection devices such as TVS diodes or ESD suppressors in the circuit design.

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DMN3055LFDB-7 Overview

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DMN3055LFDB-7 - Diodes Incorporated

DMN3055LFDB-7 Details

DMN3055LFDB-7 Frequently Asked Questions (FAQs)

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