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DMN4030LK3-13 - Diodes Incorporated

Description: MOSFETs ENHANCE MODE MOSFET 40V N-CHANNEL

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DMN4030LK3-13 - Diodes Incorporated  - 3D model
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DMN4030LK3-13 Details

  • Manufacturer Part Number:

    DMN4030LK3-13

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    8.9 W

  • Pulsed Drain Current-Max (IDM):

    37.7 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN4030LK3-13 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the DMN4030LK3-13 is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage supply of 3.3V or 5V is used, and the current rating should not exceed 1A.
  • The maximum power dissipation for the DMN4030LK3-13 is 1.5W. Ensure that the device is properly heat-sinked to prevent overheating.
  • Yes, the DMN4030LK3-13 is suitable for high-frequency applications up to 1GHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
  • To protect the DMN4030LK3-13 from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.

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DMN4030LK3-13 Overview

Use the download button to access the DMN4030LK3-13 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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