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DMN4800LSSQ-13 - Diodes Incorporated

Description: MOSFET 30V N-Ch Enh FET 25Vgs 9A 16mOhm 1.6V

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DMN4800LSSQ-13 - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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DMN4800LSSQ-13 - Diodes Incorporated  - 3D model - Small Outline Packages - SO-8
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DMN4800LSSQ-13 Details

  • Manufacturer Part Number:

    DMN4800LSSQ-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.6 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    122 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Reference Standard:

    AEC-Q101; MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN4800LSSQ-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, provide adequate heat sinking, and consider derating the device's power handling capabilities.
  • The DMN4800LSSQ-13 has built-in ESD protection, but it's still crucial to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging.
  • While the DMN4800LSSQ-13 is suitable for high-frequency switching applications, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's operating frequency is within the device's recommended range.
  • Diodes Incorporated recommends following the standard soldering conditions for surface-mount devices, including a peak temperature of 260°C, a soldering time of 10 seconds, and using a solder with a melting point above 217°C.

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DMN4800LSSQ-13 Overview

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