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DMNH6012SPSQ-13 - Diodes Incorporated

Description: MOSFET MOSFET BVDSS: 41V-60V

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DMNH6012SPSQ-13 - Diodes Incorporated PCB footprint - Other - Other - PowerDI5060-8_2021_1
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3D Models
DMNH6012SPSQ-13 - Diodes Incorporated  - 3D model - Other - PowerDI5060-8_2021_1
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DMNH6012SPSQ-13 Details

  • Manufacturer Part Number:

    DMNH6012SPSQ-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMNH6012SPSQ-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a solid ground plane, minimal thermal vias, and a heat sink attached to the top of the device to ensure optimal thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and consider derating the device's power handling capabilities.
  • The DMNH6012SPSQ-13 has built-in ESD protection, but it's still crucial to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging.
  • Yes, the DMNH6012SPSQ-13 is suitable for high-frequency switching applications due to its low capacitance and inductance. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's operating frequency is within the device's specified range.
  • The optimal gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to start with a value between 10 ohms and 100 ohms and adjust based on the device's switching characteristics and the application's performance requirements.

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DMNH6012SPSQ-13 Overview

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