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DMP2008UFG-13 - Diodes Incorporated

Description: MOSFET 20V P-CH MOSFET

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DMP2008UFG-13 - Diodes Incorporated PCB footprint - Other - Other - POWERDI3333-8_1
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DMP2008UFG-13 Details

  • Manufacturer Part Number:

    DMP2008UFG-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    113 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    41 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMP2008UFG-13 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended to be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a minimum of 2.5V and a maximum of 5.5V supply voltage. Ensure the input voltage is within this range and the device is properly decoupled with a 1uF capacitor.
  • The device can handle a maximum continuous current of 2A. However, it's recommended to derate the current handling capability based on the ambient temperature and PCB thermal design.
  • The device has built-in ESD protection, but it's recommended to add external ESD protection devices such as TVS diodes or ESD arrays to protect the device from external ESD events. Additionally, consider adding overvoltage protection devices such as voltage regulators or overvoltage protection ICs to protect the device from voltage spikes.
  • The device should be stored in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%.

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DMP2008UFG-13 Overview

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