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DMP65H13D0HSS-13 - Diodes Incorporated

Description: MOSFETs MOSFET BVDSS: 501V-650V SO-8 T&R 4K

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DMP65H13D0HSS-13 - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SO-8 (Standard B)
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3D Models
DMP65H13D0HSS-13 - Diodes Incorporated  - 3D model - Small Outline Packages - SO-8 (Standard B)
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DMP65H13D0HSS-13 Details

  • Manufacturer Part Number:

    DMP65H13D0HSS-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    0.25 A

  • Drain-source On Resistance-Max:

    13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.3 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.9 W

  • Pulsed Drain Current-Max (IDM):

    2 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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DMP65H13D0HSS-13 Overview

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