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DMT6007LFG-13 - Diodes Incorporated

Description: Trans MOSFET N-CH 60V 15A 8-Pin PowerDI EP T/R

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PCB Footprints
DMT6007LFG-13 - Diodes Incorporated PCB footprint - Other - Other - POWERDI®3333-8
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3D Models
DMT6007LFG-13 - Diodes Incorporated  - 3D model - Other - POWERDI®3333-8
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DMT6007LFG-13 Details

  • Manufacturer Part Number:

    DMT6007LFG-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    38.5 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    255

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.2 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMT6007LFG-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a solid ground plane, short traces, and minimal vias to reduce parasitic inductance and capacitance. A 4-layer PCB with a dedicated ground plane is ideal.
  • The DMT6007LFG-13 requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and within the recommended range. A decoupling capacitor of 10nF to 100nF should be placed close to the device to filter out noise.
  • The DMT6007LFG-13 is rated for operation from -40°C to 125°C. However, the device's performance may degrade at extreme temperatures. Ensure proper thermal management and consider derating the device's performance at high temperatures.
  • Yes, the DMT6007LFG-13 is suitable for high-frequency applications up to 1GHz. However, the device's performance may degrade at frequencies above 500MHz. Ensure proper PCB layout and component selection to minimize parasitic effects.
  • The DMT6007LFG-13 has an integrated ESD protection diode. However, it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.

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DMT6007LFG-13 Overview

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